Charge transport in amorphous InGaZnO thin-film transistors
نویسندگان
چکیده
منابع مشابه
Current stress instability analysis of amorphous InGaZnO thin film transistors
1. Introduction Recent researches from the demands of large size liquid crystal flat panel displays, low cost process and higher performance arouse great interest on amorphous oxide semiconductor based thin-film transistors (TFTs) as an alternative of a-Si TFTs. To achieve device reliability and stability under various current/voltage bias, temperature, and light injections, various researches ...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2012
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.86.155319